| PART |
Description |
Maker |
| AT29C257-70 AT29C257-15JC AT29C257-12JC AT29C257-9 |
8-Bit Identity/Magnitude Comparators (P=Q) with Enable 20-SO -55 to 125
256K 32K x 8 5-volt Only CMOS Flash Memory 256K 32K的8 5伏只有闪存的CMOS
8-Bit Identity/Magnitude Comparators (P=Q) with Enable 20-SOIC -55 to 125 32K X 8 FLASH 5V PROM, 120 ns, PQCC32
|
Atmel Corp.
Atmel, Corp.
|
| IDT71256SA70 IDT71256SA70PZ IDT71256SA70T IDT71256 |
Asynchronous Communications Element With Autoflow Control 48-TQFP 0 to 70 32K X 8 STANDARD SRAM, 70 ns, PDSO28
CMOS STATIC RAM 256K (32K x 8-BIT)
|
Integrated Device Technology, Inc.
IDT[Integrated Device Technology]
|
| AM28F020A AM28F020A-120FCB AM28F020A-150FCB AM28F0 |
RES 562-OHM 1% 0.125W 100PPM THK-FILM SMD-0805 TR-7-PA
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 90 ns, PDIP32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 90 ns, PDSO32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 2兆位56亩8位）的CMOS 12.0伏，整体擦除闪存的嵌入式记忆算法
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 2兆位256亩8位）CMOS 12.0伏，整体擦除闪存的嵌入式记忆算法
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 2兆位256亩8位）的CMOS 12.0伏，整体擦除闪存的嵌入式记忆算法
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 70 ns, PDSO32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 150 ns, PQCC32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 200 ns, PQCC32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 120 ns, PDIP32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 200 ns, PDSO32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 120 ns, PDSO32
|
Advanced Micro Devices, Inc.
ADVANCED MICRO DEVICES INC
|
| IDT71V256SB20Y IDT71V256 IDT71V256SB IDT71V256SB12 |
3.3V CMOS FAST SRAM WITH 2.5V COMPATIBLE INPUTS 256K (32K x 8-BIT) 32K X 8 CACHE TAG SRAM, 12 ns, PDSO28
|
Integrated Device Technology, Inc.
IDT[Integrated Device Technology]
|
| 29C256 AT29C256-15 AT29C256-70TC AT29C256-90PC AT2 |
256K 32K x 8 5-volt Only CMOS Flash Memory
High Speed CMOS Logic 8-Bit Shift Register with Input Storage 16-SO -55 to 125
High Speed CMOS Logic 4-by-4 Register File 16-PDIP -55 to 125
High Speed CMOS Logic 4-by-4 Register File 16-SOIC -55 to 125
|
Atmel Corp.
|
| 27C256-10L 27C256-12L |
256K (32K x 8) CMOS EPROM
|
Microchip
|
| 27C256 |
256K CMOS UV Erasable PROM (32K X 8)
|
General Semiconductor Inc
|
| 27C256-15_SO 27C256_04 27C256-10_L 27C256-10_P 27C |
256K (32K x 8) CMOS EPROM
|
MICROCHIP[Microchip Technology]
|
| V53C16258L V53C16258SLT40 V53C16258SLT45 V53C16258 |
HIGH PERFORMANCE 3.3 VOLT 256K X 16 EDO PAGE MODE CMOS DYNAMIC RAM OPTIONAL SELF REFRESH
256K X 16 EDO DRAM, 50 ns, PDSO40
|
Mosel Vitelic, Corp.
Mosel Vitelic Corp
MOSEL-VITELIC
|
| PM29F002T-70JC PM29F002T-90PC PM29F002T-55PC PM29F |
2 Megabit (256K X 8) 5.0 Volt-only CMOS Flash Memory 2兆位56K × 8.0伏，只有闪存的CMOS
2 Megabit (256K X 8) 5.0 Volt-only CMOS Flash Memory 2兆位256K × 8.0伏，只有闪存的CMOS
|
PMC-Sierra, Inc.
|
| IDT71256SA12PZ IDT71256SA12T IDT71256SA12TP IDT712 |
CMOS STATIC RAM 256K (32K x 8-BIT)
|
Integrated Device Technology
IDT
|
| AT49F4096-90TI AT49F4096-90TC AT49F4096-90RC AT49F |
Quadruple 2-Input Exclusive-OR Gates 14-SSOP -40 to 85
4 Megabit 256K x 16 5-volt Only CMOS Flash Memory 256K X 16 FLASH 5V PROM, 90 ns, PDSO44
Dual 16-Bit Binary Counters with 3-State Output Registers 20-TSSOP -40 to 85 256K X 16 FLASH 5V PROM, 120 ns, PDSO44
|
Atmel Corp.
Atmel, Corp.
|
